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| EMH10 / UMH10N / IMH10A Transistors General purpose (dual digital transistors) EMH10 / UMH10N / IMH10A Features 1) Two DTC123J chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. External dimensions (Units : mm) EMH10 0.22 (4) (5) (6) (3) (2) 1.2 1.6 (1) 0.13 Each lead has same dimensions Abbreviated symbol : H10 1.3 0.65 0.8 1.1 0.95 0.95 1.9 2.9 0.7 0.9 0.2 (6) 1.25 0.15 The following characteristics apply to both DTr1 and DTr2. 2.1 0.1Min. Equivalent circuit EMH10 / UMH10N (3) (2) (1) R1 R2 DTr1 DTr2 R2 R1 (4) (5) R1=2.2k R2=47k DTr2 R2 R1 (3) (2) R1=2.2k R2=47k (6) 0to0.1 Each lead has same dimensions IMH10A (4) (5) (6) R1 R2 DTr1 ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : H10 IMH10A 0.3 (1) (4) (5) 1.6 2.8 0.15 0.3to0.6 Packaging specifications Package Code Type EMH10 UMH10N IMH10A - - - Basic ordering unit (pieces) T2R 8000 Taping TN 3000 - T110 3000 - - 0to0.1 Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol : H10 (3) (2) (6) (1) (1) 2.0 Structure Epitaxial planar type NPN silicon transistor (Built-in resistor type) ROHM : EMT6 UMH10N (4) (5) (2) 0.65 (3) 0.5 0.5 0.5 1.0 1.6 EMH10 / UMH10N / IMH10A Transistors Absolute maximum ratings (Ta=25C) Parameter Supply voltage Input voltage Symbol VCC VIN IO IC (Max.) Limits 50 12 -5 100 100 150 (TOTAL) 300 (TOTAL) -55~+150 Unit V V mA mA mW C Output current Power dissipation EMH10,UMH10N IMH10A Pd Tstg 1 2 Storage temperature 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. Electrical characteristics (Ta=25C) Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Symbol VI (off) VI (on) VO (on) II IO (off) GI fT R1 R2/R1 Min. - 1.1 - - - 80 - 1.54 17 Typ. - - 0.1 - - - 250 2.2 21 Max. 0.5 - 0.3 3.6 0.5 - - 2.86 26 V V mA A - MHz k - Unit Conditions VCC=5V, IO=100A VO=0.3V, IO=5mA IO/II=5mA/0.25mA VI=5V VCC=50V, VI=0V VO=5V, IO=10mA VCE=10mA, IE=-5mA, f=100MHz - - Transition frequency of the device Electrical characteristic curves 100 50 VO=0.3V OUTPUT CURRENT : Io (A) 10m 5m 2m VCC=5V 1k 500 VO=5V Ta=100C 25C -40C INPUT VOLTAGE : VI (on) (V) 20 10 5 2 1 DC CURRENT GAIN : GI 1m 500 200 100 50 20 10 5 2 1 200 100 50 20 10 5 2 Ta=-40C 25C 100C Ta=100C 25C -40C 500m 200m 100m 100 200 500 1m 2m 5m 10m 20m 50m100m 0 0.5 1.0 1.5 2.0 2.5 3.0 1 100 200 500 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) Fig.3 DC current gain vs. output current EMH10 / UMH10N / IMH10A Transistors 1 500m lO/lI=20 OUTPUT VOLTAGE : VO (on) (V) 200m 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m Ta=100C 25C -40C 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current This datasheet has been download from: www..com Datasheets for electronics components. |
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